Report presents theory and experimental data regarding newly discovered mode for single-event upsets, (SEU's) in complementary metal-oxide/semiconductor, static random-access memories, CMOS SRAM's. SEU cross sections larger than those expected from previously known modes given rise to speculation regarding additional mode, and subsequent cross-section measurements appear to confirm speculation.
New Mode For Single-Event Upsets
NASA Tech Briefs ; 12 , 11
1988-12-01
Miscellaneous
No indication
English
AIAA | 1983
|System effects of single event upsets
AIAA | 1989
|Estimating Rates Of Single-Event Upsets
NTRS | 1988
|Anomalies due to single event upsets
AIAA | 1990
|Anomalies due to Single Event Upsets
Online Contents | 1994
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