Report presents theory and experimental data regarding newly discovered mode for single-event upsets, (SEU's) in complementary metal-oxide/semiconductor, static random-access memories, CMOS SRAM's. SEU cross sections larger than those expected from previously known modes given rise to speculation regarding additional mode, and subsequent cross-section measurements appear to confirm speculation.


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    Titel :

    New Mode For Single-Event Upsets


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    01.12.1988



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch




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