Mathematical model yields estimates of upper and lower bounds on rates of single-event upsets (SEU's) in logic circuits. SEU's are reversible changes in logic states, caused by single high-energy ions. Energetic ions passed through device along tracks perpendicular to surface, to determine parameters of model. Used to estimate rates caused by ions of various energies incident at arbitrary angles. Useful in design of integrated circuits as high-density memories for minimal susceptibility to bit errors.
Estimating Rates Of Single-Event Upsets
NASA Tech Briefs ; 12 , 10
01.11.1988
Sonstige
Keine Angabe
Englisch
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