The lateral DMOS (LDMOS) had been developed for intelligent power IC[1][2] for ECU (Electric Control Unit). The process and device simulation methodology are used while developing a devices. The physical model and parameter in analytical model are calibrated to enhance the accuracy of the simulation and to reduce lead time and costs.


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    Title :

    Development of Lateral DMOS Using Process and Device Simulation


    Additional title:

    Sae Technical Papers


    Contributors:

    Conference:

    International Congress & Exposition ; 1998



    Publication date :

    1998-02-23




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




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