Complementary metal-oxide-semiconductor (CMOS) structure has relatively high speed, high breakdown voltage, high transconductance and high packing densities.


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    Title :

    Complementary DMOS/VMOS integrated-circuit-structure


    Contributors:

    Published in:

    Publication date :

    1977-03-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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