Method is applied in middle of fabrication process: (a) after mask region is formed, diffused-boron region is etched; (b) etching is left incomplete for ion implantation; (c) boron ions are implanted into region to define accurately crucial geometry of V-groove; (d) groove is etched to completion, forming two well-defined diffusion regions that serve as source and drain of transistor. Remaining process is conventional.
Improved process control for VMOS FET's
NASA Tech Briefs ; 4 , 4
1980-06-01
Miscellaneous
No indication
English
Complementary DMOS/VMOS integrated-circuit-structure
NTRS | 1977
|VMOS Power Transistors in Automotive Systems - An Update
Automotive engineering | 1981
|VMOS-Transistoren BD 512 und BS 170
Tema Archive | 1980
VMOS Power Transistors in Automotive Systems - An Update
SAE Technical Papers | 1981
|FET's Perform Well At Cryogenic Temperatures
NTRS | 1992
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