Method is applied in middle of fabrication process: (a) after mask region is formed, diffused-boron region is etched; (b) etching is left incomplete for ion implantation; (c) boron ions are implanted into region to define accurately crucial geometry of V-groove; (d) groove is etched to completion, forming two well-defined diffusion regions that serve as source and drain of transistor. Remaining process is conventional.


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    Title :

    Improved process control for VMOS FET's


    Contributors:

    Published in:

    Publication date :

    1980-06-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English





    VMOS Power Transistors in Automotive Systems - An Update

    Blanchard,R. / Supertex,US | Automotive engineering | 1981



    VMOS Power Transistors in Automotive Systems - An Update

    Blanchard, Richard | SAE Technical Papers | 1981