The lateral DMOS (LDMOS) had been developed for intelligent power IC[1][2] for ECU (Electric Control Unit). The process and device simulation methodology are used while developing a devices. The physical model and parameter in analytical model are calibrated to enhance the accuracy of the simulation and to reduce lead time and costs.
Development of Lateral DMOS Using Process and Device Simulation
Sae Technical Papers
International Congress & Exposition ; 1998
23.02.1998
Aufsatz (Konferenz)
Englisch
Development of Lateral DMOS using Process and Device Simulation
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