The lateral DMOS (LDMOS) had been developed for intelligent power IC[1][2] for ECU (Electric Control Unit). The process and device simulation methodology are used while developing a devices. The physical model and parameter in analytical model are calibrated to enhance the accuracy of the simulation and to reduce lead time and costs.


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    Titel :

    Development of Lateral DMOS Using Process and Device Simulation


    Weitere Titelangaben:

    Sae Technical Papers


    Beteiligte:

    Kongress:

    International Congress & Exposition ; 1998



    Erscheinungsdatum :

    23.02.1998




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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