We have developed a novel capacitive acceleration sensor fabrication process by applying surface MEMS (Micro Electro-Mechanical System) technology and successfully introduced this process for volume production of a new super slim sensor. The new process uses the ICP-RIE(Inductively Coupled Plasma - Reactive Ion Etching) technology to etch single crystal SOI(Si on Insulator wafers. In this technology, vertical Si etching is followed by, lateral etching along the buried oxide to release the movable electrode. Because of a dry process, the new process does not cause the movable structures to stick to each other. Our process uses only three masks and reduces the sensor chip size to a half that of our conventional capacitive acceleration sensors.
Super Slim Automotive Acceleration Sensor Fabrication Process Developed by Applying Surface MEMS Technology
Sae Technical Papers
SAE 2006 World Congress & Exhibition ; 2006
2006-04-03
Conference paper
English
British Library Conference Proceedings | 2006
|Automotive engineering | 2006
|Super Slim Automotive Acceleration Sensor Applied MEMS Technology
British Library Conference Proceedings | 2006
|Ultra-slim automotive acceleration sensor applied MEMS technology
Automotive engineering | 2005
|Ultra-Slim Automotive Acceleration Sensor Applied MEMS Technology
SAE Technical Papers | 2005
|