Report describes experiments on irradiation of SGS 4007 complementary metal oxide/semiconductor (CMOS) integrated inverter circuits by 60Co and 137Cs radioactive sources. Purpose of experiments to supplement previous observations that minimum radiation doses at which failure occurred in more-complicated CMOS parts were lower at lower dose rates.


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    Title :

    Failures of CMOS Circuits Irradiated At Low Rates


    Contributors:

    Published in:

    Publication date :

    1990-08-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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