Report describes experiments on irradiation of SGS 4007 complementary metal oxide/semiconductor (CMOS) integrated inverter circuits by 60Co and 137Cs radioactive sources. Purpose of experiments to supplement previous observations that minimum radiation doses at which failure occurred in more-complicated CMOS parts were lower at lower dose rates.
Failures of CMOS Circuits Irradiated At Low Rates
NASA Tech Briefs ; 14 , 8
1990-08-01
Miscellaneous
No indication
English
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