Report presents design rules for advanced-technology integrated circuits made by self-aligned silicongate complementary - metal - oxide - semiconductor/silicon-on-sapphir (CMOS/SOS) process.
Design rules for CMOS/SOS circuits
NASA Tech Briefs ; 4 , 3
1980-04-01
Miscellaneous
No indication
English
Latchup in CMOS Integrated Circuits
NTRS | 1985
|Development of CMOS integrated circuits
NTRS | 1979
|Exploration of CMOS-Memristive Neuromorphic Circuits
British Library Conference Proceedings | 2011
|Exploration of CMOS-Memristive Neuromorphic Circuits
AIAA | 2011
|Finding Open Faults In CMOS Circuits
NTRS | 1984
|