Report describes experiments on irradiation of SGS 4007 complementary metal oxide/semiconductor (CMOS) integrated inverter circuits by 60Co and 137Cs radioactive sources. Purpose of experiments to supplement previous observations that minimum radiation doses at which failure occurred in more-complicated CMOS parts were lower at lower dose rates.


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    Titel :

    Failures of CMOS Circuits Irradiated At Low Rates


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    01.08.1990



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch




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