Sensitivity to ion beams is studied. Latchup effect subject of paper presenting results of testing 19 types of complementary metal-oxide semiconductor (CMOS) chips from six manufacturers. Report gives details of sensitivity of chips to latchup caused by argon and krypton ion beams. Identifies parasitic npnp paths and proides latchup cross section and qualitative explanation of latchup sensitivity for each chip type.


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    Titel :

    Latchup in CMOS Integrated Circuits


    Beteiligte:
    Soliman, K. A. (Autor:in) / Nichols, D. K. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.10.1985



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch


    Schlagwörter :


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    Single Event Latchup Protection of Integrated Circuits

    Layton, P. / Marshall, J. / Czajkowski, D. et al. | British Library Online Contents | 1997


    Latent damage from single-event latchup

    Becker, H. N. / Miyahira, T. F. / Johnston, A. H. | NTRS | 2002



    Development of CMOS integrated circuits

    Bertino, F. / Feller, A. / Greenhouse, J. et al. | NTRS | 1979