Direct current applied to molten silicon during crystallization causes impurities to migrate away from interface of growing crystal. Method improves purity of crystal without interfering with growth process or requiring additional operator attention.


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    Title :

    Purifying Silicon During Crystal Growth


    Contributors:

    Published in:

    Publication date :

    1984-12-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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