Report describes experiments on crack growth in single-crystal silicon at room temperature in air. Crack growth in (111) cleavage plane of wafers, 50 by 100 by 0.76 mm in dimension, cut from Czochralski singlecrystal silicon studied by double-torsion load-relaxation method and by acoustic-emission measurements. Scanning electron microscopy and X-ray topography also employed. Results aid in design and fabrication of silicon photovoltaic and microelectronic devices.
Crack Growth in Single-Crystal Silicon
NASA Tech Briefs ; 10 , 3
1986-05-01
Miscellaneous
No indication
English
Electrochemically induced and orientation dependent crack propagation in single crystal silicon
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