Experimental work shows chemical vapor deposition (CVD) by pyrolysis of gaseous germanium tetrahydride provides epitaxial layers of germanium on silicon. Relatively low temperature of CVD process (500 degrees to 900 degrees C) reduces stresses that occur at layer/substrate interface during growth and cooling.
Chemical Vapor Deposition of Germanium of Silicon
NASA Tech Briefs ; 7 , 2
1983-05-01
Miscellaneous
No indication
English
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