Experimental work shows chemical vapor deposition (CVD) by pyrolysis of gaseous germanium tetrahydride provides epitaxial layers of germanium on silicon. Relatively low temperature of CVD process (500 degrees to 900 degrees C) reduces stresses that occur at layer/substrate interface during growth and cooling.


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    Title :

    Chemical Vapor Deposition of Germanium of Silicon


    Contributors:
    Aharoni, H. (author)

    Published in:

    Publication date :

    1983-05-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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