Report lists tables of standard free-energy change, equilibrium constant, and heat of reaction for chemical vapor deposition (CVD) of silicon from silane over temperature range of 100 to 1000 K. Data indicates silicon CVD may be a commercially economical process for production of silicon for solar arrays and other applications.


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    Title :

    Chemical-vapor deposition of silicon from silane


    Contributors:
    Hsu, G. C. (author) / Lutwack, R. (author) / Praturi, A. K. (author)

    Published in:

    Publication date :

    1979-03-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English