Strained-layer InGaAs/GaAs/GaInP quantum well lasers grown by gas-source molecular-beam epitaxy (GSMBE) are reported. The characteristics of these lasers are comparable to those of the best results of InGaAs/GaAs/AlGaAs lasers.


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    Title :

    Characteristics of InGaAs/GaAs/GaInP quantum well lasers grown by gas-source molecular-beam epitaxy


    Contributors:
    Zhang, G. (author) / Nappi, J. (author) / Asonen, H. (author) / Pessa, M. (author)


    Publication date :

    1992-01-01


    Size :

    154617 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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