Strained-layer InGaAs/GaAs/GaInP quantum well lasers grown by gas-source molecular-beam epitaxy (GSMBE) are reported. The characteristics of these lasers are comparable to those of the best results of InGaAs/GaAs/AlGaAs lasers.
Characteristics of InGaAs/GaAs/GaInP quantum well lasers grown by gas-source molecular-beam epitaxy
1992-01-01
154617 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Characteristics of InGaAs/GaAs/GaInP Quantum Well Lasers Grown by Gas-Source Molecular-Beam Epitaxy
British Library Conference Proceedings | 1992
|British Library Conference Proceedings | 2003
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