We demonstrate ridge-waveguide InGaAsN/GaAs single quantum well lasers at wavelength 1.3 and 1.4 /spl mu/m grown by molecular beam epitaxy using radio frequency plasma nitrogen source. Threshold current density of 0.57 and 3.87 KA/cm/sup 2/ at /spl lambda/=1.3 and 1.4 /spl mu/m, respectively, were obtained for the lasers with a 3-/spl mu/m ridge width and a 2-mm cavity length. Slope efficiencies of 0.67 and 0.37 W/A were obtained for /spl lambda/=1.3 and 1.4 /spl mu/m emission, respectively, with cavity length L=1 mm. The cw kink-free output power of wavelength 1.3 /spl mu/m single lateral mode laser is more than 150 mW, and the maximum total wallplug efficiency of 29% was obtained.


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    Titel :

    Long-wavelength ridge-waveguide InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy


    Beteiligte:
    Wang, J.S. (Autor:in) / Kovsh, A.R. (Autor:in) / Hsiao, R.S. (Autor:in) / Lin, G. (Autor:in) / Livshits, D.A. (Autor:in) / Chen, I.F. (Autor:in) / Wu, Y.T. (Autor:in) / Chen, L.P. (Autor:in) / Chen, J.F. (Autor:in) / Chi, J.Y. (Autor:in)


    Erscheinungsdatum :

    2003-01-01


    Format / Umfang :

    90276 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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