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    Titel :

    Low threshold current, high efficiency 1.3 mum wavelength InGaAsN-GaAs based quantum well lasers


    Beteiligte:

    Kongress:

    Annual meeting; 12th, IEEE; Lasers and Electro-Optics Society; LEOS '99 ; 1999 ; San Francisco, CA



    Erscheinungsdatum :

    1999-01-01


    Format / Umfang :

    2 pages


    Anmerkungen:

    IEEE cat no 99CH37009




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch





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