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    Title :

    The characteristic of 3-stacked InGaAs/GaAs QD (quantum dot) lasers grown by atomic layer molecular beam epitaxy



    Conference:

    5th, Pacific Rim conference on lasers and electro-optics; photonics lights innovation: from nano-structures and devices to systems and networks ; 2003 ; Taipei, Taiwan



    Publication date :

    2003-01-01


    Size :

    618 pages


    Remarks:

    Includes bibliographic references and author index



    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English






    Characteristics of InGaAs/GaAs/GaInP Quantum Well Lasers Grown by Gas-Source Molecular-Beam Epitaxy

    Zhang, G. / Ovtchinnikov, A. / Naeppi, J. et al. | British Library Conference Proceedings | 1992