InAsN/InGaAs multiple quantum wells (MQWs) structures for midinfrared diode lasers is grown on (100) InP substrates by using a VG V-80H gas-source molecular epitaxy (GSMBE). After the GSMBE growth, the laser sample is annealed at 575/spl deg/C for 20 min under N ambient in order to improve the crystal quality. The PL spectrums of the laser structure before and after annealing are studied. Then the structure is processed into 50-nm-wide broad-area lasers. Laser oscillation under pulsed injection current was obtained from 10K to 260K.


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    Title :

    InAsN/InGaAs/InP quantum well structures for midinfrared diode lasers


    Contributors:
    Lin, H.H. (author) / Shih, D.K. (author) / Lin, Y.H. (author) / Chiang, K.H. (author)


    Publication date :

    2003-01-01


    Size :

    96917 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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