InAsN/InGaAs multiple quantum wells (MQWs) structures for midinfrared diode lasers is grown on (100) InP substrates by using a VG V-80H gas-source molecular epitaxy (GSMBE). After the GSMBE growth, the laser sample is annealed at 575/spl deg/C for 20 min under N ambient in order to improve the crystal quality. The PL spectrums of the laser structure before and after annealing are studied. Then the structure is processed into 50-nm-wide broad-area lasers. Laser oscillation under pulsed injection current was obtained from 10K to 260K.


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    Titel :

    InAsN/InGaAs/InP quantum well structures for midinfrared diode lasers


    Beteiligte:
    Lin, H.H. (Autor:in) / Shih, D.K. (Autor:in) / Lin, Y.H. (Autor:in) / Chiang, K.H. (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    96917 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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