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    Titel :

    InGaAs Quantum Well Diode Lasers with Regrown Al Containing Layers for Application to Current Confinement Structures



    Kongress:

    Annual meeting; 10th, IEEE: Lasers and Electro-Optics Society ; 1997 ; San Francisco; CA



    Erscheinungsdatum :

    01.01.1997


    Format / Umfang :

    2 pages


    Anmerkungen:

    Described as proceedings. IEEE cat no: 97CH36057




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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