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    Title :

    InGaAs Quantum Well Diode Lasers with Regrown Al Containing Layers for Application to Current Confinement Structures



    Conference:

    Annual meeting; 10th, IEEE: Lasers and Electro-Optics Society ; 1997 ; San Francisco; CA



    Publication date :

    1997-01-01


    Size :

    2 pages


    Remarks:

    Described as proceedings. IEEE cat no: 97CH36057




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English





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