InGaAs Quantum Well Diode Lasers with Regrown Al Containing Layers for Application to Current Confinement Structures
Annual meeting; 10th, IEEE: Lasers and Electro-Optics Society ; 1997 ; San Francisco; CA
1997-01-01
2 pages
Described as proceedings. IEEE cat no: 97CH36057
Conference paper
English
LEOS , lasers , IEEE , electro-optics
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