Novel long wavelength separate confinement heterostructure (SCH) and graded-index separate confinement heterostructure (GRIN-SCH) quantum well (QW) laser diodes have been made. These lasers use In/sub 0.53/Ga/sub 0.47/As/InP short period superlattices (SPSLs) instead of the conventional quaternary (In/sub x/Ga/sub 1-x/As/sub y/P/sub 1-y/) layers in the laser active region. The SPSLs consist of alternate thin layers of InP and In/sub 0.53/Ga/sub 0.47/As, with the ratio of their widths determining the effective bandgap. Therefore, once lattice matched InGaAs is achieved, a large continuous range of pseudo-quaternary alloys can be easily obtained by altering the SPSL well:barrier (InGaAs:InP) layer thicknesses. This allows long wavelength laser diodes to be grown without using quaternary alloys and consequently increases flexibility from both materials grows and laser design perspectives.<>
MOVPE grown lasers having InGaAs/InP superlattice confinement and barrier layers
Proceedings of LEOS '93 ; 425-426
1993-01-01
169119 byte
Conference paper
Electronic Resource
English
MOVPE Grown Lasers Having InGaAs/InP Superlattice Confinement and Barrier Layers
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