Novel long wavelength separate confinement heterostructure (SCH) and graded-index separate confinement heterostructure (GRIN-SCH) quantum well (QW) laser diodes have been made. These lasers use In/sub 0.53/Ga/sub 0.47/As/InP short period superlattices (SPSLs) instead of the conventional quaternary (In/sub x/Ga/sub 1-x/As/sub y/P/sub 1-y/) layers in the laser active region. The SPSLs consist of alternate thin layers of InP and In/sub 0.53/Ga/sub 0.47/As, with the ratio of their widths determining the effective bandgap. Therefore, once lattice matched InGaAs is achieved, a large continuous range of pseudo-quaternary alloys can be easily obtained by altering the SPSL well:barrier (InGaAs:InP) layer thicknesses. This allows long wavelength laser diodes to be grown without using quaternary alloys and consequently increases flexibility from both materials grows and laser design perspectives.<>


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    Titel :

    MOVPE grown lasers having InGaAs/InP superlattice confinement and barrier layers


    Beteiligte:
    Ginty, A. (Autor:in) / Lambkin, J.D. (Autor:in) / Considine, L. (Autor:in) / Kelly, W.M. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.01.1993


    Format / Umfang :

    169119 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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