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    Titel :

    Optical studies of MOVPE-grown GaN layers



    Kongress:

    International conference, Solid state crystals: Epilayers and heterostructures in optoelectronics and semiconductor technology ; 1998 ; Zakopane; Poland



    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    4 pages


    Anmerkungen:

    also known as ICSSC'98; See also same shelfmark vol 3724 1999 for further papers. See also 6275.7208 vol 7 no 2 1999 for further papers




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    MOVPE grown lasers having InGaAs/InP superlattice confinement and barrier layers

    Ginty, A. / Lambkin, J.D. / Considine, L. et al. | IEEE | 1993


    MOVPE Grown Lasers Having InGaAs/InP Superlattice Confinement and Barrier Layers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1993


    High performance MOVPE grown quantum cascade lasers

    Wilson, W.R. / Green, R.P. / Revin, D.G. et al. | IEEE | 2004


    Characteristics of HgCdTe layers grown by MOVPE on (211)B CdTe/Si substrates [4795-02]

    Suh, S.-H. / Kim, J.-S. / Seo, D.-W. et al. | British Library Conference Proceedings | 2002


    AlGaInP Visible Lasers Grown by One-Step MOVPE

    Tanahashi, T. / Furuta, A. / Anayama, C. et al. | British Library Online Contents | 1994