A versatile, non-destructive interferometric optical characterization technique can be applied to broad-area optoelectronic devices or wafers at various processing stages to detect stress defects, and heteroepitaxial material, thermal bond, or current injection nonuniformities.
Interferometric imaging technique for nondestructive evaluation of optoelectronic devices and wafers
Proceedings of LEOS'94 ; 2 ; 31-32 vol.2
1994-01-01
436015 byte
Conference paper
Electronic Resource
English
Interferometric Imaging Technique for Nondestructive Evaluation of Optoelectronic Devices and Wafers
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