A versatile, non-destructive interferometric optical characterization technique can be applied to broad-area optoelectronic devices or wafers at various processing stages to detect stress defects, and heteroepitaxial material, thermal bond, or current injection nonuniformities.


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    Title :

    Interferometric imaging technique for nondestructive evaluation of optoelectronic devices and wafers


    Contributors:
    Hall, D.C. (author)

    Published in:

    Proceedings of LEOS'94 ; 2 ; 31-32 vol.2


    Publication date :

    1994-01-01


    Size :

    436015 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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