A versatile, non-destructive interferometric optical characterization technique can be applied to broad-area optoelectronic devices or wafers at various processing stages to detect stress defects, and heteroepitaxial material, thermal bond, or current injection nonuniformities.
Interferometric imaging technique for nondestructive evaluation of optoelectronic devices and wafers
Proceedings of LEOS'94 ; 2 ; 31-32 vol.2
01.01.1994
436015 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Interferometric Imaging Technique for Nondestructive Evaluation of Optoelectronic Devices and Wafers
British Library Conference Proceedings | 1994
|Incoherent interferometric measurement technique for PLC devices
British Library Conference Proceedings | 2003
|Synthetic interferometric imaging technique for moving objects
Tema Archiv | 1976
|A nondestructive automated defect detection system for silicon carbide wafers
British Library Online Contents | 2005
|