A versatile, non-destructive interferometric optical characterization technique can be applied to broad-area optoelectronic devices or wafers at various processing stages to detect stress defects, and heteroepitaxial material, thermal bond, or current injection nonuniformities.


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    Titel :

    Interferometric imaging technique for nondestructive evaluation of optoelectronic devices and wafers


    Beteiligte:
    Hall, D.C. (Autor:in)

    Erschienen in:

    Proceedings of LEOS'94 ; 2 ; 31-32 vol.2


    Erscheinungsdatum :

    01.01.1994


    Format / Umfang :

    436015 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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