The threshold and spectral characteristics of patterned quantum dot lasers fabricated by selective area MOCVD crystal growth are presented Full three-dimensional confinement of carriers in an engineered quantum structure is demonstrated.


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    Title :

    Threshold and spectral characteristics of quantum dot lasers fabricated by selective area epitaxy


    Contributors:


    Publication date :

    2005-01-01


    Size :

    1586752 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




    Room Temperature Operation of Patterned InGaAs Quantum Dot Lasers Fabricated by Electron Beam Lithography and Selective Area Epitaxy

    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004



    Patterned Quantum Dot Lasers Fabricated using Electron Beam Lithography and Selective Area Epitaxial Growth

    IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005