The threshold and spectral characteristics of patterned quantum dot lasers fabricated by selective area MOCVD crystal growth are presented Full three-dimensional confinement of carriers in an engineered quantum structure is demonstrated.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Threshold and spectral characteristics of quantum dot lasers fabricated by selective area epitaxy


    Beteiligte:
    Elarde, V.C. (Autor:in) / Coleman, J.J. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    1586752 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




    Room Temperature Operation of Patterned InGaAs Quantum Dot Lasers Fabricated by Electron Beam Lithography and Selective Area Epitaxy

    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004



    Patterned Quantum Dot Lasers Fabricated using Electron Beam Lithography and Selective Area Epitaxial Growth

    IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005