The threshold and spectral characteristics of patterned quantum dot lasers fabricated by selective area MOCVD crystal growth are presented Full three-dimensional confinement of carriers in an engineered quantum structure is demonstrated.
Threshold and spectral characteristics of quantum dot lasers fabricated by selective area epitaxy
(CLEO). Conference on Lasers and Electro-Optics, 2005. ; 3 ; 1802-1804 Vol. 3
01.01.2005
1586752 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Conference Proceedings | 2005
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|British Library Conference Proceedings | 2005
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