This work presents the first room temperature operation of GaAs based ridge waveguide semiconductor lasers containing lithographically defined InGaAs quantum dots as the active region. Semiconductor laser fabrication by electron beam lithography and selective growth epitaxy are also demonstrated.


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    Titel :

    Room temperature operation of patterned InGaAs quantum dot lasers fabricated by electron beats lithography and selective area epitaxy


    Beteiligte:
    Elarde, V.C. (Autor:in) / Rangarajan, R. (Autor:in) / Borchardt, J.J. (Autor:in) / Coleman, J.J. (Autor:in)


    Erscheinungsdatum :

    01.01.2004


    Format / Umfang :

    129337 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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    IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005




    Room Temperature cw Operation of InGaAs/InGaAsP/InP Quantum Dot Lasers

    Institute of Electrical and Electronics Engineers | British Library Conference Proceedings | 2004