This work presents the first room temperature operation of GaAs based ridge waveguide semiconductor lasers containing lithographically defined InGaAs quantum dots as the active region. Semiconductor laser fabrication by electron beam lithography and selective growth epitaxy are also demonstrated.
Room temperature operation of patterned InGaAs quantum dot lasers fabricated by electron beats lithography and selective area epitaxy
01.01.2004
129337 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Conference Proceedings | 2004
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|British Library Conference Proceedings | 2005
|Room Temperature cw Operation of InGaAs/InGaAsP/InP Quantum Dot Lasers
British Library Conference Proceedings | 2004
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