This paper demonstrates a fabrication process which allows the location and geometry of quantum dots to be explicitly defined using electron beam lithography and selective area metal-organic chemical vapor deposition crystal growth. In this study, these fabrication processes are described and results are presented demonstrating significantly improved performance of laser devices containing a patterned quantum dot active layer.


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    Titel :

    Patterned quantum dot lasers fabricated using electron beam lithography and selective area epitaxial growth


    Beteiligte:
    Elarde, V.C. (Autor:in) / Coleman, J.J. (Autor:in) / Bryce, A.C. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    264594 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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