This work presents the first room temperature operation of GaAs based ridge waveguide semiconductor lasers containing lithographically defined InGaAs quantum dots as the active region. Semiconductor laser fabrication by electron beam lithography and selective growth epitaxy are also demonstrated.


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    Title :

    Room temperature operation of patterned InGaAs quantum dot lasers fabricated by electron beats lithography and selective area epitaxy


    Contributors:


    Publication date :

    2004-01-01


    Size :

    129337 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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