Multilayered InAs quantum dot (QD) on the GaAs substrate up to 12 layers has been successfully stacked. Very low threshold current density of 740A/cm2(62A/cm2/QD-layer) has been achieved at room temperature.


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    Title :

    InAs Quantum Dot Lasers on GaAs Substrate with 12 Layers


    Contributors:
    Shimizu, H. (author) / Saravanan, S. (author)


    Publication date :

    2005-01-01


    Size :

    293522 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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