The realization of semiconductor laser diodes and light-emitting diodes on Si substrates would permit the creation of complex optoelectronic circuits for the first time, enabling chip-to-chip and system-to-system optical communications. Direct epitaxial growth of lll-V semiconductor materials on Si or Ge is one of the most promising candidates for fabricating electrically pumped light sources on a Si platform. Here, we describe the first quantum-dot laser diode to be realized on a Ge substrate. To fabricate the laser, a single-domain GaAs buffer layer was first grown on the Ge substrate using the Ga prelayer technique. A long-wavelength InAs/GaAs quantum-dot structure was then fabricated on the high-quality GaAs buffer layer. Lasing at a wavelength of 1305 nm with the extremely low threshold current density of 55.2 A/cm2 was observed under continuous-wave (CW) current drive at room temperature.


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    Title :

    1.3-um InAs/GaAs quantum-dot lasers monolithically grown on Ge substrate


    Contributors:
    Ting Wang, (author) / Tutu, F. (author) / Pozzi, F. (author) / Seeds, A. (author) / Huiyun Liu, (author)


    Publication date :

    2011-09-01


    Size :

    533338 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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