By stacking multiple layers of InAs-GaAs quantum dots gain saturation in zero-dimensional laser structures is overcome. The effect of thermal coupling between carriers in different dots in a multi-layer structure is demonstrated.


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    Title :

    Overcoming gain saturation in InAs/GaAs quantum dot lasers


    Contributors:
    Schmidt, O.G. (author) / Kirstaedter, N. (author) / Mao, M.-H. (author) / Ledentsov, N.N. (author) / Bimberg, D. (author) / Ustinov, V.M. (author) / Egorov, A.Yu. (author) / Zhukov, A.E. (author) / Maximov, M.V. (author) / Kop'ev, P.S. (author)


    Publication date :

    1996-01-01


    Size :

    215852 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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