By stacking multiple layers of InAs-GaAs quantum dots gain saturation in zero-dimensional laser structures is overcome. The effect of thermal coupling between carriers in different dots in a multi-layer structure is demonstrated.
Overcoming gain saturation in InAs/GaAs quantum dot lasers
1996-01-01
215852 byte
Conference paper
Electronic Resource
English
Overcoming Gain Saturation in InAs/GaAs Quantum Dot Lasers
British Library Conference Proceedings | 1996
|British Library Conference Proceedings | 2005
|Gain Switching of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon
British Library Online Contents | 2018
|InAs Quantum Dot Lasers on GaAs Substrate with 12 Layers
IEEE | 2005
|