Gain saturation increases the radiative component, J/sub rad/, of the threshold current density, J/sub th/, and its contribution to the thermal sensitivity of J/sub th/ in short cavity or low QD density devices. However, the main cause of their thermal sensitivity is a strong non-radiative recombination.


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    Title :

    Effect of gain saturation and nonradiative recombination on the thermal characteristics of InAs/GaAs 1.3 /spl mu/m quantum dot lasers


    Contributors:
    Marko, I.P. (author) / Masse, N. (author) / Sweeney, S.J. (author) / Adams, A.R. (author) / Sellers, I.R. (author) / Mowbray, D.J. (author) / Skolnick, M.S. (author) / Liu, H.Y. (author) / Groom, K.M. (author)


    Publication date :

    2005-01-01


    Size :

    171003 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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