Gain saturation increases the radiative component, J/sub rad/, of the threshold current density, J/sub th/, and its contribution to the thermal sensitivity of J/sub th/ in short cavity or low QD density devices. However, the main cause of their thermal sensitivity is a strong non-radiative recombination.


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    Titel :

    Effect of gain saturation and nonradiative recombination on the thermal characteristics of InAs/GaAs 1.3 /spl mu/m quantum dot lasers


    Beteiligte:
    Marko, I.P. (Autor:in) / Masse, N. (Autor:in) / Sweeney, S.J. (Autor:in) / Adams, A.R. (Autor:in) / Sellers, I.R. (Autor:in) / Mowbray, D.J. (Autor:in) / Skolnick, M.S. (Autor:in) / Liu, H.Y. (Autor:in) / Groom, K.M. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    171003 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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