Gain saturation increases the radiative component, J/sub rad/, of the threshold current density, J/sub th/, and its contribution to the thermal sensitivity of J/sub th/ in short cavity or low QD density devices. However, the main cause of their thermal sensitivity is a strong non-radiative recombination.
Effect of gain saturation and nonradiative recombination on the thermal characteristics of InAs/GaAs 1.3 /spl mu/m quantum dot lasers
01.01.2005
171003 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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