Multilayered InAs quantum dot (QD) on the GaAs substrate up to 12 layers has been successfully stacked. Very low threshold current density of 740A/cm2(62A/cm2/QD-layer) has been achieved at room temperature.


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    Titel :

    InAs Quantum Dot Lasers on GaAs Substrate with 12 Layers


    Beteiligte:
    Shimizu, H. (Autor:in) / Saravanan, S. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    293522 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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