Multilayered InAs quantum dot (QD) on the GaAs substrate up to 12 layers has been successfully stacked. Very low threshold current density of 740A/cm2(62A/cm2/QD-layer) has been achieved at room temperature.
InAs Quantum Dot Lasers on GaAs Substrate with 12 Layers
01.01.2005
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Aufsatz (Konferenz)
Elektronische Ressource
Englisch
InAs Quantum Dot Lasers on GaAs Substrate with 12 Layers
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