A tensile-strained active region enhances TM gain, reducing radiative currents in semiconductor lasers. Auger recombination is reduced but not intervalence band absorption. Tensile InGaAs/InGaAsP approaches a Type II band line-up, increasing barrier-related losses.


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    Title :

    Improved performance in tensile-strained long wavelength lasers


    Contributors:
    Jones, G. (author) / Silver, M. (author) / Hawley, M. (author) / O'Reilly, E.P. (author) / Adams, A.R. (author) / Thijs, P.J.A. (author)


    Publication date :

    1992-01-01


    Size :

    163697 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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