A tensile-strained active region enhances TM gain, reducing radiative currents in semiconductor lasers. Auger recombination is reduced but not intervalence band absorption. Tensile InGaAs/InGaAsP approaches a Type II band line-up, increasing barrier-related losses.
Improved performance in tensile-strained long wavelength lasers
01.01.1992
163697 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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