A tensile-strained active region enhances TM gain, reducing radiative currents in semiconductor lasers. Auger recombination is reduced but not intervalence band absorption. Tensile InGaAs/InGaAsP approaches a Type II band line-up, increasing barrier-related losses.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Improved performance in tensile-strained long wavelength lasers


    Beteiligte:
    Jones, G. (Autor:in) / Silver, M. (Autor:in) / Hawley, M. (Autor:in) / O'Reilly, E.P. (Autor:in) / Adams, A.R. (Autor:in) / Thijs, P.J.A. (Autor:in)


    Erscheinungsdatum :

    01.01.1992


    Format / Umfang :

    163697 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Improved Performance in Tensile-Strained Long Wavelength Lasers

    Jones, G. / Silver, M. / Hawley, M. J. et al. | British Library Conference Proceedings | 1992


    Tensile-strained AlGaAs/GaAsP single quantum-well lasers

    Agahi, F. / Baliga, A. / Kei May Lau et al. | IEEE | 1994


    Tensile-Strained AlGaAs/GaAsP Single Quantum-Well Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994


    Temperature characteristics of GaAsP/AlGaAs tensile strained quantum well lasers

    Tolliver, T.R. / Anderson, N.G. / Agahi, F. et al. | IEEE | 1996


    Temperature Characteristics of GaAsP/AlGaAs Tensile Strained Quantum Well Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996