In this work, we experimentally study the temperature characteristics of tensile-strained GaAsP-AlGaAs single-quantum-well-heterostructure (SQWH) laser diodes. Specifically, we systematically examine the dependence of the characteristic temperature (T/sub O/) on the quantum well composition in broad-area stripe lasers with identical quantum well widths (115 /spl Aring/) and cavity lengths (750 /spl mu/m).
Temperature characteristics of GaAsP/AlGaAs tensile strained quantum well lasers
01.01.1996
206695 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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