In this work, we experimentally study the temperature characteristics of tensile-strained GaAsP-AlGaAs single-quantum-well-heterostructure (SQWH) laser diodes. Specifically, we systematically examine the dependence of the characteristic temperature (T/sub O/) on the quantum well composition in broad-area stripe lasers with identical quantum well widths (115 /spl Aring/) and cavity lengths (750 /spl mu/m).


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    Titel :

    Temperature characteristics of GaAsP/AlGaAs tensile strained quantum well lasers


    Beteiligte:
    Tolliver, T.R. (Autor:in) / Anderson, N.G. (Autor:in) / Agahi, F. (Autor:in) / Kei May Lau (Autor:in)


    Erscheinungsdatum :

    01.01.1996


    Format / Umfang :

    206695 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Temperature Characteristics of GaAsP/AlGaAs Tensile Strained Quantum Well Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996


    Tensile-strained AlGaAs/GaAsP single quantum-well lasers

    Agahi, F. / Baliga, A. / Kei May Lau et al. | IEEE | 1994


    Tensile-Strained AlGaAs/GaAsP Single Quantum-Well Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994


    Interdiffused AlGaAs/GaAsP quantum well lasers

    Chan, K. S. / Chan, M. C. Y. / Optical Society of America | British Library Conference Proceedings | 1998