Summary form only given. Several important applications in medicine, spectroscopy and pumping of fs solid-state lasers like Cr:LiSAF require wavelengths in the 700-750 nm range. The use of a tensile strained GaAsP QW embedded in an AlGaAs waveguide is a promising design for high power lasers in this wavelength range, combining the advantages of an Al-free QW with the established growth and processing techniques for AlGaAs based lasers. Lower threshold current densities and higher internal efficiencies in comparison to compressively-strained InAlGaAs/AlGaAs and InGaAsP/InAlGaP structures, respectively, were demonstrated.


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    Titel :

    High power tensile-strained GaAsP-AlGaAs quantum well diode lasers emitting between 718 nm and 735 nm


    Beteiligte:
    Erbert, G. (Autor:in) / Bugge, F. (Autor:in) / Knauer, A. (Autor:in) / Maege, J. (Autor:in) / Sebastian, J. (Autor:in) / Thies, A. (Autor:in) / Wenzel, H. (Autor:in) / Weyers, M. (Autor:in) / Trankle, G. (Autor:in)


    Erscheinungsdatum :

    1999-01-01


    Format / Umfang :

    274833 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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