Summary form only given. Several important applications in medicine, spectroscopy and pumping of fs solid-state lasers like Cr:LiSAF require wavelengths in the 700-750 nm range. The use of a tensile strained GaAsP QW embedded in an AlGaAs waveguide is a promising design for high power lasers in this wavelength range, combining the advantages of an Al-free QW with the established growth and processing techniques for AlGaAs based lasers. Lower threshold current densities and higher internal efficiencies in comparison to compressively-strained InAlGaAs/AlGaAs and InGaAsP/InAlGaP structures, respectively, were demonstrated.


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    Title :

    High power tensile-strained GaAsP-AlGaAs quantum well diode lasers emitting between 718 nm and 735 nm


    Contributors:
    Erbert, G. (author) / Bugge, F. (author) / Knauer, A. (author) / Maege, J. (author) / Sebastian, J. (author) / Thies, A. (author) / Wenzel, H. (author) / Weyers, M. (author) / Trankle, G. (author)


    Publication date :

    1999-01-01


    Size :

    274833 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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