In this work, we experimentally study the temperature characteristics of tensile-strained GaAsP-AlGaAs single-quantum-well-heterostructure (SQWH) laser diodes. Specifically, we systematically examine the dependence of the characteristic temperature (T/sub O/) on the quantum well composition in broad-area stripe lasers with identical quantum well widths (115 /spl Aring/) and cavity lengths (750 /spl mu/m).


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    Title :

    Temperature characteristics of GaAsP/AlGaAs tensile strained quantum well lasers


    Contributors:
    Tolliver, T.R. (author) / Anderson, N.G. (author) / Agahi, F. (author) / Kei May Lau, (author)


    Publication date :

    1996-01-01


    Size :

    206695 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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