Experimental and theoretical results on OMVPE grown Al/sub 0.34/Ga/sub 0.66/As/GaAs/sub 1-y/P/sub y/ separate-confinement single quantum-well laser diodes are reported. CW output power as high as 620 mW/facet and pulsed threshold current densities (J/sub th/) as low as 170 A/cm/sup 2/ have been obtained from 90/spl times/1000 /spl mu/m devices.
Tensile-strained AlGaAs/GaAsP single quantum-well lasers
Proceedings of LEOS'94 ; 1 ; 109-110 vol.1
01.01.1994
139725 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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