Experimental and theoretical results on OMVPE grown Al/sub 0.34/Ga/sub 0.66/As/GaAs/sub 1-y/P/sub y/ separate-confinement single quantum-well laser diodes are reported. CW output power as high as 620 mW/facet and pulsed threshold current densities (J/sub th/) as low as 170 A/cm/sup 2/ have been obtained from 90/spl times/1000 /spl mu/m devices.


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    Titel :

    Tensile-strained AlGaAs/GaAsP single quantum-well lasers


    Beteiligte:
    Agahi, F. (Autor:in) / Baliga, A. (Autor:in) / Kei May Lau (Autor:in) / Choi, H.K. (Autor:in) / Anderson, N. (Autor:in)

    Erschienen in:

    Proceedings of LEOS'94 ; 1 ; 109-110 vol.1


    Erscheinungsdatum :

    01.01.1994


    Format / Umfang :

    139725 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Tensile-Strained AlGaAs/GaAsP Single Quantum-Well Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994


    Temperature characteristics of GaAsP/AlGaAs tensile strained quantum well lasers

    Tolliver, T.R. / Anderson, N.G. / Agahi, F. et al. | IEEE | 1996


    Temperature Characteristics of GaAsP/AlGaAs Tensile Strained Quantum Well Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996


    Interdiffused AlGaAs/GaAsP quantum well lasers

    Chan, K. S. / Chan, M. C. Y. / Optical Society of America | British Library Conference Proceedings | 1998