Experimental and theoretical results on OMVPE grown Al/sub 0.34/Ga/sub 0.66/As/GaAs/sub 1-y/P/sub y/ separate-confinement single quantum-well laser diodes are reported. CW output power as high as 620 mW/facet and pulsed threshold current densities (J/sub th/) as low as 170 A/cm/sup 2/ have been obtained from 90/spl times/1000 /spl mu/m devices.


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    Title :

    Tensile-strained AlGaAs/GaAsP single quantum-well lasers


    Contributors:
    Agahi, F. (author) / Baliga, A. (author) / Kei May Lau (author) / Choi, H.K. (author) / Anderson, N. (author)

    Published in:

    Proceedings of LEOS'94 ; 1 ; 109-110 vol.1


    Publication date :

    1994-01-01


    Size :

    139725 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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